Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes

Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes

Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright green InGaN single quantum well (SQW) light emitting diodes (LED’s), fabricated by Nichia Chemical Industry Ltd, has been studied over a wide temperature range (T = 15-300 K) and as a function of injection current level. It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently ...

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color ...

Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes

We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (20 2 1) plane. At a current density 100A/cm, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 C. Hot/cold factors were more than 0.9 at current densities greater than 20A/...